| Course title | |||||
| 電子デバイスⅠおよび演習 [Electronic Devices Ⅰ& Practices] | |||||
| Course category | technology speciality courses,ets. | Requirement | Credit | 3 | |
| Department | Year | 2～4 | Semester | 3rd | |
| Course type | 3rd | Course code | 022717 | ||
| Instructor(s) | |||||
| 久保 若奈 [KUBO Wakana] | |||||
| Facility affiliation | Faculty of Engineering | Office | Email address | ||
| Course description |
| Physics, electric characteristics, operation mechanisms and fabrication technologies for electronic active devices, especially semiconductor devices are lectured. They are a core of electronic elements for integrated circuits, which agive the fundamental technical basis for current life and industrial activities. |
| Expected Learning |
|
After completing this course the students should be able to explain the following topics: Energy bands in semiconductors, intrinsic and extrinsic semiconductors. Carrier transport in semiconductors: diffusion current, drift current, mobility, and resistivity. See the Curriculum maps. Generation and recombination of carriers. Devices: p-n junction diode, Zener diode, tunnel diode, BJT, JFET, MOS capacitor and MOSFET, LED, p-i-n diode and basics of LASERs. Device technology: integrated circuits fabrication process, oxidation, diffusion, ion implantation, photolithography and CMOS process. |
| Course schedule |
|
1) fundamental theories for semiconductor I 2) fundamental theories for semiconductor II 3) electric conduction in semiconductir I 4) electric conduction in semiconductir II 5) pn junction diode I 6) pn junction diode II 7) applications pf pn diode to photonic devices 8) metal-semiconductor contact 9) intermediate exam, bipolar transistor I 10) bipolar transistor II 11) MOS transistor I 12) MOS transistor II 13) MOS transistor III 14) junstion-type FET, Schottky-gate FET, integarated circuit, recent trens 15) Summary Final exam |
| Prerequisites |
| Students are expected to have the standard amount of time to prepare for and review the lecture as specified by the University. |
| Required Text(s) and Materials |
| 國岡、上村著「新版基礎半導体工学」（朝倉書店） |
| References |
| Assessment/Grading |
|
Intermediate Exam: 50% Final Exam: 50% Evaluations for Homework & small comprehension test are considered |
| Message from instructor(s) |
| Course keywords |
| Office hours |
| Fri: 16:30-18:00 |
| Remarks 1 |
| Remarks 2 |
| Related URL |
| http://web.tuat.ac.jp/~kubolab/top_En.htm |
| Lecture Language |
| Japanese |
| Language Subject |
| Last update |
| 3/14/2019 1:25:56 PM |