| Course title | |||||
| 電子デバイスⅠおよび演習 [Electronic Devices Ⅰ& Practices] | |||||
| Course category | technology speciality courses,ets. | Requirement | Credit | 3 | |
| Department | Year | 2～4 | Semester | 3rd | |
| Course type | 3rd | Course code | 022718 | ||
| Instructor(s) | |||||
| 白樫 淳一 [SHIRAKASHI Junichi] | |||||
| Facility affiliation | Faculty of Engineering | Office | Email address | ||
| Course description |
| This course introduces semiconductor device operation based on energy bands and carrier statistics. It describes operation of p-n junctions and metal-semiconductor junctions. It extends this knowledge to descriptions of bipolar and field effect transistors, and other microelectronic basic devices. This course is intended for graduate students who plan to study in the area of electronics or just have an interest in that area. This course emphasizes the fundamentals of materials and device operation. It is expected that the students taking this course will include EE and non-EE majors. The EE students have likely had an undergraduate course in solid-state devices whereas the non-majors should have some background in fundamentals of mechanics, electricity and magnetism and perhaps quantum mechanics. In this course, we will study semiconductor devices from a fundamental point of view emphasizing a thorough understanding of the mechanisms of device operation. It is expected that students who successfully complete the course will have an understanding of basic semiconductor devices sufficient to design transistors and diodes to particular specifications. |
| Expected Learning |
| The general goal of this course is to allow the students to understand the fundamentals of semiconductor behavior and the operation of basic semiconductor devices. By the end of the course, the students will be able to design diodes and transistors to a given set of specifications. Additionally, this course lays the foundations for the understanding of a vast array of other more advanced semiconductor devices such as those covered in more advanced courses. |
| Course schedule |
|
1. Overview of Semiconductor Physics 1.1 Semiconductor Materials and their Microscopic Structure 1.2 Energy Bands and Electron and Hole Effective Masses 1.3 Density of States, Occupation Statistics, and Equilibrium Carrier Concentrations 1.4 Beyond Equilibrium: Excess Carriers and Carrier Transport 2. P-N Junctions and Interfaces 2.1 P-N Junction (Equilibrium Characteristics, I-V Characteristics, Nonideal Behavior) 2.2 Metal Semiconductor Junctions (Schottky Barriers, Ohmic Contacts) 2.3 Metal-Oxide-Semiconductor (MOS) Capacitors 3. Bipolar Junction Transistors (BJTs) 3.1 BJT Structure and Operation 3.2 Ideal BJT: I-V Characteristics and Current Gain 3.3 Nonideal/Secondary Effects 4. MOSFET Devices 4.1 MOSFET Structure and Operation 4.2 Ideal MOSFET: I-V Characteristics and Transconductance 4.3 Nonideal/Secondary Effects |
| Prerequisites |
| Solid State Physics, Quantum Mechanics |
| Required Text(s) and Materials |
| 國岡、上村著「新版基礎半導体工学」（朝倉書店） (in Japanese) |
| References |
|
S.M．ジー著「半導体デバイス」（産業図書） (in Japanese) 垂井監訳「半導体デバイスの基礎」（マグロウヒル） (in Japanese) |
| Assessment/Grading |
|
Final Exam: 60% Homework: 30% Quizzes: 10% |
| Message from instructor(s) |
| Course keywords |
| Semiconductor, Diode, Transistor, P-N junction, MOS, Bipolar, Integrated Circuit |
| Office hours |
| 16:30-18:00 (Fri) |
| Remarks 1 |
| E2 Class |
| Remarks 2 |
| Related URL |
| http://web.tuat.ac.jp/~nanotech/index.htm |
| Lecture Language |
| Japanese |
| Language Subject |
| Last update |
| 1/27/2020 4:38:51 PM |