| Course title | |||||
| 薄膜合成化学特論 [Advanced Thin Film Synthesis] | |||||
| Course category | courses for doctoral programs | Requirement | Credit | 2 | |
| Department | Year | ～ | Semester | 1st | |
| Course type | 1st | Course code | 1080202 | ||
| Instructor(s) | |||||
| 熊谷 義直, 村上 尚 [KUMAGAI Yoshinao, MURAKAMI Hisashi] | |||||
| Facility affiliation | Faculty of Engineering | Office | 1N-101 | Email address | |
| Course description |
|
Behaviors of electrons and holes in semiconductor single crystals will be introduced. Then, analyses and understanding of the behavior of opto-electronic devices will be conducted using the basic theory. This is a successor lecture of the "Advanced Inorganic Reaction" in the Master's Program. It is desirable to take both lectures. |
| Expected Learning |
|
Students who mastered this course will be able to analyze and understand the operation of opto-electronic devices. Corresponding criteria in the Diploma Policy: (A), (D) |
| Course schedule |
|
Week 1: Guidance Week 2: Energy band in semiconductor single crystals Week 3: Evaluation of carrier concentration Week 4: Control of conductive type by donor and acceptor Week 5-6: Carrier transportation Week 7-8: Carrier generation and recombination Week 9-10: p-n junction diode Week 11-12: Bipolar transistor Week 13-14: Unipolar devices Week 15: Summary of the 1st to 14th lectures and final examination |
| Prerequisites |
| None |
| Required Text(s) and Materials |
| None |
| References |
| S. M. Sze, Physics of Semiconductor Devices (John Wiley & Sons, Newyork) |
| Assessment/Grading |
| Evaluation will be carried out by class attitude (15%) and the final examination (85%). |
| Message from instructor(s) |
| Course keywords |
| semiconductor single crystal, energy band, donor, acceptor, bipolar device, unipolar device |
| Office hours |
| 17:00-18:00 of Monday |
| Remarks 1 |
| Remarks 2 |
| Related URL |
| Lecture Language |
| Japanese |
| Language Subject |
| Last update |
| 3/19/2019 8:19:34 PM |