Course title
電子デバイスⅠ   [Electronic Devices I]
Course category	technology speciality courses	Requirement		Credit	2
Department		Year	2～4	Semester	3rd
Course type	3rd	Course code	022670
Instructor(s)
白樫 淳一   [SHIRAKASHI Junichi]
Facility affiliation	Faculty of Engineering	Office	afjgxte/L1151	Email address

Course description

This course introduces semiconductor device operation based on energy bands and carrier statistics. It describes operation of p-n junctions and metal-semiconductor junctions. It extends this knowledge to descriptions of bipolar and field effect transistors, and other microelectronic basic devices. This course is intended for graduate students who plan to study in the area of electronics or just have an interest in that area. This course emphasizes the fundamentals of materials and device operation. It is expected that the students taking this course will include EE and non-EE majors. The EE students have likely had an undergraduate course in solid-state devices whereas the non-majors should have some background in fundamentals of mechanics, electricity and magnetism and perhaps quantum mechanics. In this course, we will study semiconductor devices from a fundamental point of view emphasizing a thorough understanding of the mechanisms of device operation. It is expected that students who successfully complete the course will have an understanding of basic semiconductor devices sufficient to design transistors and diodes to particular specifications.

Expected Learning

The general goal of this course is to allow the students to understand the fundamentals of semiconductor behavior and the operation of basic semiconductor devices. By the end of the course, the students will be able to design diodes and transistors to a given set of specifications. Additionally, this course lays the foundations for the understanding of a vast array of other more advanced semiconductor devices such as those covered in more advanced courses.

Course schedule

1. Overview of Semiconductor Physics 1.1 Semiconductor Materials and their Microscopic Structure 1.2 Energy Bands and Electron and Hole Effective Masses 1.3 Density of States, Occupation Statistics, and Equilibrium Carrier Concentrations 1.4 Beyond Equilibrium: Excess Carriers and Carrier Transport 2. P-N Junctions and Interfaces 2.1 P-N Junction (Equilibrium Characteristics, I-V Characteristics, Nonideal Behavior) 2.2 Metal Semiconductor Junctions (Schottky Barriers, Ohmic Contacts) 2.3 Metal-Oxide-Semiconductor (MOS) Capacitors 3. Bipolar Junction Transistors (BJTs) 3.1 BJT Structure and Operation 3.2 Ideal BJT: I-V Characteristics and Current Gain 3.3 Nonideal/Secondary Effects 4. MOSFET Devices 4.1 MOSFET Structure and Operation 4.2 Ideal MOSFET: I-V Characteristics and Transconductance 4.3 Nonideal/Secondary Effects

Prerequisites

Solid State Physics, Quantum Mechanics

Required Text(s) and Materials

Original texts created by the instructor will be distributed.

References

S.M．ジー著「半導体デバイス」（産業図書） (in Japanese) 垂井監訳「半導体デバイスの基礎」（マグロウヒル） (in Japanese) 國岡、上村著「新版基礎半導体工学」（朝倉書店） (in Japanese)

Assessment/Grading

Final Exam: 80% Homework: 20% Remarks/comments/statements are considered. The grade evaluation in this online class is premised on all attendances, and comprehensively evaluates the attitude to learn, quizzes, report, and online tests. Standard study time set by our university is required to get the grade. The grade will be given according to the following criteria by comprehensive evaluation; S: 90 points or more, A: 80 or more and less than 90 points, B: 70 or more and less than 80 points, C: 60 or more and less than 70 points.

Message from instructor(s)

Course keywords

Semiconductor, Diode, Transistor, P-N junction, MOS, Bipolar, Integrated Circuit

Office hours

16:30-18:00 (Fri)

Remarks 1

Remarks 2

Related URL

http://web.tuat.ac.jp/~nanotech/index.htm

Lecture Language

Japanese

Language Subject

Last update

10/12/2020 7:48:31 PM