Course title
薄膜合成化学特論   [Advanced Thin Film Synthesis]
Course category courses for doctoral programs  Requirement   Credit 2 
Department   Year   Semester 1st 
Course type 1st  Course code 1080202
Instructor(s)
熊谷 義直, 村上 尚   [KUMAGAI Yoshinao, MURAKAMI Hisashi]
Facility affiliation Faculty of Engineering Office afjgxte/L1151  Email address

Course description
Behaviors of electrons and holes in semiconductor single crystals will be introduced. Then, analyses and understanding of the behavior of opto-electronic devices will be conducted using the basic theory.
This is a successor lecture of the "Advanced Inorganic Reaction" in the Master's Program. It is desirable to take both lectures.
Expected Learning
Students who mastered this course will be able to analyze and understand the operation of opto-electronic devices.

Corresponding criteria in the Diploma Policy: (A), (D)
Course schedule
Week 1: Guidance
Week 2: Energy band in semiconductor single crystals
Week 3: Evaluation of carrier concentration
Week 4: Control of conductive type by donor and acceptor
Week 5-6: Carrier transportation
Week 7-8: Carrier generation and recombination
Week 9-10: p-n junction diode
Week 11-12: Bipolar transistor
Week 13-14: Unipolar devices
Week 15: Summary of the 1st to 14th lectures and final examination
Prerequisites
None
Required Text(s) and Materials
None
References
S. M. Sze, Physics of Semiconductor Devices (John Wiley & Sons, Newyork)
Assessment/Grading
Evaluation will be carried out by class attitude (15%) and the final examination (85%).
Message from instructor(s)
Course keywords
semiconductor single crystal, energy band, donor, acceptor, bipolar device, unipolar device
Office hours
17:00-18:00 of Monday
Remarks 1
Remarks 2
Related URL
Lecture Language
Japanese
Language Subject
Last update
2/17/2021 11:17:03 AM